Turbocharged Transistors

How silicon carbide is shifting into next gear
Turbocharged Transistors Strategy Paper Porsche Consulting
Marius Ruhnau | Marco Paul | Marvin Müller | Mark Puttock
Jun 2025 | Strategy Paper | English

Turbocharged Transistors

How silicon carbide is shifting into next gear

From electric vehicles to renewable energy systems, silicon carbide (SiC) is rapidly becoming a cornerstone of efficient, high-performance power electronics. Offering better switching capabilities, higher thermal tolerance, and greater energy efficiency than traditional silicon, SiC is critical for sustainable innovation in electrification. However, cost pressures, geopolitical tensions, and challenges in industrialization and ramp-up still pose barriers to broad adoption.

This strategy paper – developed by Porsche Consulting in collaboration with Entegris – explores how industry players can overcome these challenges through advanced technologies, strategic partnerships, and digital transformation.

24 %

is the annual growth forecast for the global SiC power device market through 2029.

30 %

yield improvements are needed in SiC wafer manufacturing to enable cost competitiveness.

60 %

die-level cost reduction can be achieved through optimized yield, automation, and system design.

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Turbocharged Transistors Strategy Paper Porsche Consulting

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